Ingot and wafer alignment

  • Fast Crystal orientation for ingots and wagers
  • Marking and measuring the in-plane direction.
  • Materials: Si, Ge, InP, GaAs, SiC…

Specification

Parameter Value
Miscut (error 𝝈)
0.1° or 0.01°
Miscut range
±12°
Throughput Miscut
20 sec
Throughput In Plane Crystal Determination
20 sec
Beam size
1mm x 1mm
In-plane orientation precision
0.5°

Higher precision specification are achievable upon request using a different optics.

Analysis NIST SRM2012 Procedure

Open diffractomer for Quality Control XRD or XRF

Automation Software