Sirius XRS provides contract measurements in the following areas:
X-ray reflectivity is based on the constructive interference of X-rays scattered from the surface of the thin film and the different interfaces between the sublayers of the multilayer stacks. Measuring the XRR curves and subsequient state-of-the-art fitting allows determination of the thickness and the density of the layers as well as the roughness and roughness correlations of the different interfaces.
Rocking curves measurements is a high-resolution X-ray diffraction method for determination of peak displacement and broadening of the Bragg peaks due to lattice (mismatch) strain, dislocations or compositional variations, typically in semiconductor epitaxial layers, quantum dots and semiconductor devices.
Reciprocal space mapping is a complementary high-resolution X-ray diffraction method for measurement and separation of the effects of peak displacement, broadening and overlapp of the Bragg peaks due to lattice (mismatch) strain, dislocations or compositional variations, typically in semiconductor epitaxial layers, quantum dots and semiconductor devices.
X-ray diffraction analysis provides a wide variety of information about the structure of crystalline and amorphous materials.
Sirius XRS uses state-of-the-art XRD techniques for phase identification and determination of:
Residual stresses in materials can arise during different processing, e.g heat treatement or machining. In measuring residual stress using X-ray diffraction, the strain in the crystal lattice is measured first as shifts of the Bragg peaks and the associated residual stress is determined then from the elastic constants assuming a linear elastic response.